Description：

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL,H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR-xxK and H5TQ4G63EFR-xxKare a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the mainmemory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. Whileall addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data,Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The datapaths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

FEATURES：

• VDD=VDDQ=1.5V +/- 0.075V

• Fully differential clock inputs (CK, CK) operation

• Differential Data Strobe (DQS, DQS)

• On chip DLL align DQ, DQS and DQS transition with CK transition

• DM masks write data-in at the both rising and fallingedges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13and 14 supported

• Programmable additive latency 0, CL-1, and CL-2supported

• Programmable CAS Write latency (CWL) = 5, 6, 7, 89 and 10

• Programmable burst length 4/8 with both nibble sequential and interleave mode

• BL switch on the fly 

• 8banks

• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)- 7.8 µs at 0oC ~ 85 oC- 3.9 µs at 85oC ~ 95 oC- 1.95 µs at 85oC ~ 95 oCCommercial Temperature( 0oC ~ 95 oC)Industrial Temperature( -40oC ~ 95 oC)Automotive Temperature( -40oC ~ 105 oC)

• JEDEC standard 78ball FBGA(x8), 96ball FBGA (x16)

• Driver strength selected by EMRS

• Dynamic On Die Termination supported

• Asynchronous RESET pin supported

• ZQ calibration supported

• TDQS (Termination Data Strobe) supported (x8 only)

• Write Levelization supported

• 8 bit pre-fetch