Description：

The K4A4G165WF-BCTD is a high-performance 4Gb (512MB) DDR4 SDRAM memory component from Samsung Semiconductor, organized as 256M x 16 bits. Fabricated using advanced process technology, this F-die device operates at a standard 1.2V supply voltage (VDD and VDDQ range of 1.14V to 1.26V), delivering significant power savings over previous DDR3 generations. Encased in a space-saving 96-ball FBGA package, it supports data rates up to 2666 Mbps and is designed to meet the high-speed, low-power memory demands of modern computing and embedded systems. The device is fully RoHS compliant and halogen-free.

Features:

Memory Density: 4 Gb (512 MB).

Organization: 256M x 16 (16-bit data bus).

Supply Voltage: VDD and VDDQ = 1.2V (1.14V to 1.26V); VPP = 2.5V (2.375V to 2.75V).

High-Speed Performance: Supports data transfer rates up to 2666 Mbps (PC4-2133).

Package: 96-ball FBGA (13.30mm x 7.50mm).

Operating Temperature: 0°C to +95°C.

JEDEC Standard: Compliant with DDR4 SDRAM specifications.

Advanced Functionalities: Supports auto precharge, asynchronous reset, CRC error checking, ZQ calibration, dynamic on-die termination, and data mask functions.

Low Power: Operates at a reduced core voltage for lower power consumption compared to DDR.

Packaging: Available in Tape & Reel or Tray.

Environmental Compliance: Lead-free, RoHS compliant, and Halogen-Free.

Applications:

Servers and Data Centers: Used in RDIMM and UDIMM modules for cloud computing and big data processing.

Personal Computers: Integrated into desktop and laptop memory modules (UDIMM, SO-DIMM).

Networking Equipment: Employed in 5G base stations, routers, and switches for high-speed data buffering.

Consumer Electronics: Found in smart TVs, monitors, and gaming devices.

Embedded Systems: Used in industrial control, automation, and data acquisition equipment.

AI & Deep Learning: Serves as high-speed cache memory in AI accelerators and GPU/FPGA-based systems.

Storage Devices: Functions as a DRAM buffer or cache in cost-sensitive SSD designs.