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TI UCC27211AQDDARQ1 Datesheet

The Texas Instruments UCC27211AQDDARQ1 is an automotive-grade, 120V half-bridge gate driver designed to drive two N-channel MOSFETs in high-side and low-side configurations. Building upon the popular UCC27201 driver, this device delivers significant performance enhancements with 3.7A peak source and 4.5A peak sink currents, enabling efficient driving of high-power MOSFETs with minimal switching losses during the Miller plateau transition. The device features robust input structures that can withstand -10V to +20V independent of the supply voltage, eliminating the need for rectifier diodes when connecting to gate drive transformers. The switching node (HS pin) handles voltages as low as -(24 - VDD)V, protecting the high-side channel from negative voltage spikes caused by parasitic inductance and stray capacitance. The UCC27211AQDDARQ1 offers TTL-compatible inputs with enhanced hysteresis for improved noise immunity when interfacing with analog or digital PWM controllers.


Description:

The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET driver; however, this device offers significant performance improvements. The peak output pull-up and pull-down currents have been increased to 3.7A source and 4.5A sink, enabling the drive of high-power MOSFETs with minimal switching losses during the Miller plateau transition. The input structure can directly handle -10VDC, enhancing device robustness and enabling direct connection to gate drive transformers without the need for rectifier diodes. Additionally, the inputs are independent of the supply voltage and have a maximum rating of 20V. The switching node (HS pin) of the UCC27211A-Q1 can handle voltages as low as -(24 - VDD)V, protecting the high-side channel from the negative voltages inherent in parasitic inductance and stray capacitance. The UCC27211A-Q1 (TTL inputs) features higher hysteresis, allowing connection to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled with 4ns turn-on and turn-off matching between them. An on-chip bootstrap diode rated at 120V eliminates the need for external discrete diodes. Both the high-side and low-side drivers feature undervoltage lockout (UVLO) with symmetrical turn-on and turn-off behavior, forcing the outputs low when the drive voltage drops below the rated threshold.


Features:

AEC-Q100 qualified for automotive applications: Device temperature Grade 1

Junction temperature range: -40°C to +150°C

Drives two N-channel MOSFETs in high-side and low-side configurations with independent inputs

Maximum bootstrap voltage: 120VDC

3.7A peak source current, 4.5A peak sink current

Input pins can withstand -10V to +20V and are independent of the supply voltage range

TTL-compatible inputs

VDD operating range: 8V to 17V (absolute maximum 20V)

7.2ns rise time and 5.5ns fall time with 1000pF load

Fast propagation delay time (20ns typical)

4ns delay matching

Symmetrical undervoltage lockout for high-side and low-side drivers

Industry-standard SO-PowerPAD SOIC-8 package

Applications:

Automotive DC/DC converters and OBC

Two-wheeler/three-wheeler traction drives and battery packs

Electric Power Steering (EPS)

Wireless charging

Smart glass modules


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